ROHM Dual SP8K52 2 Type N-Channel MOSFET, 3 A, 100 V Enhancement, 8-Pin SOP SP8K52HZGTB
- RS-stocknr.:
- 222-4376
- Fabrikantnummer:
- SP8K52HZGTB
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 15,70
(excl. BTW)
€ 19,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.460 stuk(s) vanaf 20 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,57 | € 15,70 |
| 50 - 90 | € 1,538 | € 15,38 |
| 100 - 240 | € 1,394 | € 13,94 |
| 250 - 990 | € 1,258 | € 12,58 |
| 1000 + | € 1,229 | € 12,29 |
*prijsindicatie
- RS-stocknr.:
- 222-4376
- Fabrikantnummer:
- SP8K52HZGTB
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SP8K52 | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.75mm | |
| Width | 6 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SP8K52 | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 1.75mm | ||
Width 6 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The ROHM SP8K52HZG n automotive grade MOSFET that EC-Q101 qualified. Two Nch 100V MOSFETs are included in the SOP8 package. Built-in ESD protection diode. Ideal for switching applications.
Low on-resistance
Small Surface Mount Package (SOP8)
Pb-free lead plating ; RoHS compliant
AEC-Q101 Qualified
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