Infineon OptiMOS Type N-Channel MOSFET, 70 A, 40 V Enhancement, 8-Pin TDSON IPC70N04S5L4R2ATMA1

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Verpakkingsopties
RS-stocknr.:
222-4662
Fabrikantnummer:
IPC70N04S5L4R2ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Maximum Power Dissipation Pd

50W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Height

1.1mm

Width

5.58 mm

Standards/Approvals

No

Length

5.25mm

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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