Infineon OptiMOS Type N-Channel MOSFET, 57 A, 30 V Enhancement, 8-Pin TDSON
- RS-stocknr.:
- 165-5986
- Fabrikantnummer:
- BSC052N03LSATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 1.415,00
(excl. BTW)
€ 1.710,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,283 | € 1.415,00 |
*prijsindicatie
- RS-stocknr.:
- 165-5986
- Fabrikantnummer:
- BSC052N03LSATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 28W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.35 mm | |
| Height | 1.1mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 28W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 5.35 mm | ||
Height 1.1mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N.v.t.
- Land van herkomst:
- CN
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C Peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 8-Pin TDSON BSC052N03LSATMA1
- Infineon OptiMOS™ MOSFET TDSON-8 BSC014N06NSTATMA1
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 8-Pin TDSON BSC005N03LS5IATMA1
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 8-Pin TDSON BSC011N03LSIATMA1
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 8-Pin TDSON BSC0901NSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 8-Pin TDSON BSZ065N03LSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 8-Pin TDSON BSC011N03LSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 8-Pin TDSON BSC005N03LS5ATMA1