Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 80 V Enhancement, 3-Pin TO-252 IPD80R2K8CEATMA1

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€ 14,55

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Verpakkingsopties
RS-stocknr.:
222-4675
Fabrikantnummer:
IPD80R2K8CEATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

80V

Series

CoolMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.8Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12nC

Maximum Power Dissipation Pd

42W

Maximum Operating Temperature

150°C

Height

2.41mm

Width

6.22 mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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