Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R3K3P7ATMA1

Bekijk alle MOSFETs

Subtotaal (1 verpakking van 25 eenheden)*

€ 11,45

(excl. BTW)

€ 13,85

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • 2.850 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per verpakking*
25 +€ 0,458€ 11,45

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
215-2532
Fabrikantnummer:
IPN80R3K3P7ATMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

800V

Package Type

SOT-223

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.3Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

6.1W

Typical Gate Charge Qg @ Vgs

5.8nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

Gerelateerde Links