Infineon Dual FF6MR 1 Type N-Channel MOSFET, 250 A, 1200 V Enhancement AG-62MM FF6MR12KM1BOSA1
- RS-stocknr.:
- 222-4796
- Fabrikantnummer:
- FF6MR12KM1BOSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 773,95
(excl. BTW)
€ 936,48
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 28 stuk(s) vanaf 01 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 773,95 |
| 2 - 2 | € 735,25 |
| 3 + | € 704,29 |
*prijsindicatie
- RS-stocknr.:
- 222-4796
- Fabrikantnummer:
- FF6MR12KM1BOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 250A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | AG-62MM | |
| Series | FF6MR | |
| Mount Type | Chassis | |
| Maximum Drain Source Resistance Rds | 5.81mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 20mW | |
| Forward Voltage Vf | 5.85V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 250A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type AG-62MM | ||
Series FF6MR | ||
Mount Type Chassis | ||
Maximum Drain Source Resistance Rds 5.81mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 20mW | ||
Forward Voltage Vf 5.85V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Infineon 62 mm 1200 V, 6 mΩ half bridge module with Cool Sic™ MOSFET.
High current density
Low switching losses
Superior gate oxide reliability
Highest robustness against humidity
Robust integrated body diode, and thus optimal thermal conditions
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