Infineon IMW1 Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin TO-247 IMW120R060M1HXKSA1
- RS-stocknr.:
- 222-4856
- Fabrikantnummer:
- IMW120R060M1HXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 8,11
(excl. BTW)
€ 9,81
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 46 stuk(s) vanaf 30 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 8,11 |
| 5 - 9 | € 7,70 |
| 10 - 24 | € 7,37 |
| 25 - 49 | € 7,06 |
| 50 + | € 6,56 |
*prijsindicatie
- RS-stocknr.:
- 222-4856
- Fabrikantnummer:
- IMW120R060M1HXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | IMW1 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series IMW1 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC™ 1200 V, 60 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Gerelateerde Links
- Infineon IMW1 N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R060M1HXKSA1
- Infineon IMW1 N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R350M1HXKSA1
- Infineon IMW1 N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R220M1HXKSA1
- Infineon IMW1 N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R045M1XKSA1
- Infineon IMW1 N-Channel MOSFET 1700 V, 3-Pin TO-247 IMW120R045M1XKSA1
- Infineon CoolSiC SiC N-Channel MOSFET 1200 V, 3-Pin TO-247 AIMW120R060M1HXKSA1
- Infineon N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R007M1HXKSA1
- Infineon N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R014M1HXKSA1