Infineon IMW1 Type N-Channel MOSFET, 4.7 A, 1200 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 222-4859
- Fabrikantnummer:
- IMW120R350M1HXKSA1
- Fabrikant:
- Infineon
Subtotaal (1 tube van 30 eenheden)*
€ 79,62
(excl. BTW)
€ 96,33
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 + | € 2,654 | € 79,62 |
*prijsindicatie
- RS-stocknr.:
- 222-4859
- Fabrikantnummer:
- IMW120R350M1HXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | IMW1 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series IMW1 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC™ 1200 V, 350 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
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