Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 10-Pin TO-252
- RS-stocknr.:
- 222-4903
- Fabrikantnummer:
- IPDD60R190G7XTMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1700 eenheden)*
€ 1.895,50
(excl. BTW)
€ 2.293,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1700 + | € 1,115 | € 1.895,50 |
*prijsindicatie
- RS-stocknr.:
- 222-4903
- Fabrikantnummer:
- IPDD60R190G7XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD50R | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Height | 21.11mm | |
| Standards/Approvals | No | |
| Width | 2.35mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD50R | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Height 21.11mm | ||
Standards/Approvals No | ||
Width 2.35mm | ||
Automotive Standard No | ||
The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves efficiency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
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