Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 10-Pin TO-252

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€ 1.649,00

(excl. BTW)

€ 1.989,00

(incl. BTW)

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  • Verzending vanaf 04 mei 2026
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RS-stocknr.:
222-4903
Fabrikantnummer:
IPDD60R190G7XTMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

IPD50R

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

18nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

76W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.6mm

Standards/Approvals

No

Height

21.11mm

Width

2.35 mm

Automotive Standard

No

The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Enabling highest energy efficiency

Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits

Reduced parasitic source inductance improves efficiency and ease-of-use

Enables higher power density solutions

Exceeding the highest quality standards

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