ROHM Dual 2 Type N, Type P-Channel MOSFET, 7 A, 30 V Enhancement, 9-Pin DFN

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RS-stocknr.:
223-6202
Fabrikantnummer:
HS8MA2TCR1
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

Type N, Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

30V

Package Type

DFN

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

0.08Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

4W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

7.8nC

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Width

3.3 mm

Standards/Approvals

No

Length

3.3mm

Height

0.8mm

Number of Elements per Chip

2

Automotive Standard

No

The ROHM small signal MOSFET has TSMT8 package type. It is mainly used for switching.

Low on - resistance

Small surface mount package

Pb-free plating, RoHS compliant

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