Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-252 AUIRFR5305TRL
- RS-stocknr.:
- 223-8457
- Fabrikantnummer:
- AUIRFR5305TRL
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 13,29
(excl. BTW)
€ 16,08
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 11.615 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,658 | € 13,29 |
| 25 - 45 | € 2,312 | € 11,56 |
| 50 - 120 | € 2,18 | € 10,90 |
| 125 - 245 | € 2,016 | € 10,08 |
| 250 + | € 1,886 | € 9,43 |
*prijsindicatie
- RS-stocknr.:
- 223-8457
- Fabrikantnummer:
- AUIRFR5305TRL
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Forward Voltage Vf | -1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Forward Voltage Vf -1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon automotive qualified single P-channel HEXFET power MOSFET in a D2-pak package. The cellular design of power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. It is used in automotive and wide variety of applications because of fast switching speed and ruggedized device.
Advanced planar technology
Dynamic dV/dT rating
175°C operating temperature
Fast switching
Lead free
RoHS compliant
Gerelateerde Links
- Infineon HEXFET P-Channel MOSFET 55 V, 3-Pin DPAK AUIRFR5305TRL
- Infineon HEXFET P-Channel MOSFET 55 V, 3-Pin DPAK IRFR5305TRPBF
- Infineon HEXFET P-Channel MOSFET 55 V, 3-Pin DPAK AUIRFR5305TR
- Infineon HEXFET P-Channel MOSFET 55 V, 3-Pin D2PAK IRF5305STRLPBF
- Infineon HEXFET P-Channel MOSFET 55 V, 3-Pin IPAK IRFU5305PBF
- Infineon IRFR5305PBF P-Channel MOSFET 55 V, 3-Pin DPAK IRFR5305TRLPBF
- Infineon HEXFET P-Channel MOSFET 55 V, 3-Pin DPAK IRLR9343TRPBF
- Infineon HEXFET P-Channel MOSFET 55 V, 3-Pin DPAK IRFR9024NTRPBF
