Infineon HEXFET Type P-Channel MOSFET, 20 A, 55 V, 3-Pin TO-252 IRLR9343TRPBF
- RS-stocknr.:
- 214-4474
- Fabrikantnummer:
- IRLR9343TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 20 eenheden)*
€ 17,70
(excl. BTW)
€ 21,42
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 3.440 stuk(s) vanaf 01 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,885 | € 17,70 |
| 100 - 180 | € 0,84 | € 16,80 |
| 200 - 480 | € 0,822 | € 16,44 |
| 500 - 980 | € 0,769 | € 15,38 |
| 1000 + | € 0,717 | € 14,34 |
*prijsindicatie
- RS-stocknr.:
- 214-4474
- Fabrikantnummer:
- IRLR9343TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 79W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 79W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon Digital Audio HEXFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
It has repetitive Avalanche Capability for Robustness and Reliability
Gerelateerde Links
- Infineon HEXFET Type P-Channel MOSFET 55 V, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V, 3-Pin TO-252 AUIRFR5305TRL
- Infineon HEXFET Type P-Channel MOSFET 55 V, 3-Pin TO-252 IRFR5505TRLPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET -55 V Enhancement, 3-Pin TO-252