Vishay N-Channel 80 V Type N-Channel MOSFET, 299 A, 80 V, 4-Pin PowerPAK (8x8L) SIJH800E-T1-GE3
- RS-stocknr.:
- 225-9921
- Fabrikantnummer:
- SIJH800E-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 10,46
(excl. BTW)
€ 12,66
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 4.874 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 5,23 | € 10,46 |
| 20 - 48 | € 4,97 | € 9,94 |
| 50 - 98 | € 4,025 | € 8,05 |
| 100 - 198 | € 3,66 | € 7,32 |
| 200 + | € 3,04 | € 6,08 |
*prijsindicatie
- RS-stocknr.:
- 225-9921
- Fabrikantnummer:
- SIJH800E-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 299A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | N-Channel 80 V | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Maximum Power Dissipation Pd | 3.3W | |
| Typical Gate Charge Qg @ Vgs | 210nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 8mm | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 299A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series N-Channel 80 V | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Maximum Power Dissipation Pd 3.3W | ||
Typical Gate Charge Qg @ Vgs 210nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 8mm | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET Gen IV power MOSFET
Fully lead (Pb)-free device
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
50 % smaller footprint than D2PAK (TO-263)
100 % Rg and UIS tested
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