Vishay P-Channel 30 V Type P-Channel MOSFET, 280 A, 30 V, 4-Pin PowerPAK (8x8L) SQJQ131EL-T1_GE3
- RS-stocknr.:
- 225-9958
- Fabrikantnummer:
- SQJQ131EL-T1_GE3
- Fabrikant:
- Vishay
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 225-9958
- Fabrikantnummer:
- SQJQ131EL-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK (8x8L) | |
| Series | P-Channel 30 V | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Forward Voltage Vf | -0.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 487nC | |
| Maximum Power Dissipation Pd | 600W | |
| Maximum Operating Temperature | 175°C | |
| Width | 8mm | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Height | 1.7mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK (8x8L) | ||
Series P-Channel 30 V | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Forward Voltage Vf -0.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 487nC | ||
Maximum Power Dissipation Pd 600W | ||
Maximum Operating Temperature 175°C | ||
Width 8mm | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Height 1.7mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
Gerelateerde Links
- Vishay P-Channel 30 V Type P-Channel MOSFET 30 V, 4-Pin PowerPAK (8x8L) SQJQ131EL-T1_GE3
- Vishay P-Channel 12 V Type P-Channel MOSFET 12 V, 4-Pin PowerPAK (8x8L) SQJ123ELP-T1_GE3
- Vishay P-Channel 40 V Type P-Channel MOSFET 40 V, 4-Pin PowerPAK (8x8L) SQJQ141EL-T1_GE3
- Vishay TrenchFET Gen IV Type P-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ130EL-T1_GE3
- Vishay N-Channel 30 V N-Channel MOSFET 30 V, 4-Pin PowerPAK (8x8L) SQJ128ELP-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -60 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ161EL-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -80 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ181EL-T1_GE3
- Vishay SQJQ143EL P-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK (8x8L) SQJQ143EL-T1_GE3