Vishay N-Channel 40 V Type N-Channel MOSFET, 575 A, 40 V, 8-Pin PowerPAK (8x8LR) SQJQ144AER-T1_GE3
- RS-stocknr.:
- 225-9963
- Fabrikantnummer:
- SQJQ144AER-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 14,40
(excl. BTW)
€ 17,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 1.665 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,88 | € 14,40 |
| 50 - 120 | € 2,708 | € 13,54 |
| 125 - 245 | € 2,448 | € 12,24 |
| 250 - 495 | € 2,304 | € 11,52 |
| 500 + | € 2,16 | € 10,80 |
*prijsindicatie
- RS-stocknr.:
- 225-9963
- Fabrikantnummer:
- SQJQ144AER-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 575A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK (8x8LR) | |
| Series | N-Channel 40 V | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 116nC | |
| Maximum Power Dissipation Pd | 600W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.6mm | |
| Length | 8.3mm | |
| Width | 8 mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 575A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK (8x8LR) | ||
Series N-Channel 40 V | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 116nC | ||
Maximum Power Dissipation Pd 600W | ||
Maximum Operating Temperature 175°C | ||
Height 1.6mm | ||
Length 8.3mm | ||
Width 8 mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
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