Vishay SQJQ144AE Type N-Channel MOSFET, 575 A, 40 V Enhancement, 8-Pin PowerPAK (8x8L) SQJQ144AE-T1_GE3
- RS-stocknr.:
- 204-7198
- Fabrikantnummer:
- SQJQ144AE-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 22,87
(excl. BTW)
€ 27,67
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 21 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 2,287 | € 22,87 |
| 50 - 90 | € 1,829 | € 18,29 |
| 100 - 240 | € 1,601 | € 16,01 |
| 250 - 490 | € 1,487 | € 14,87 |
| 500 + | € 1,235 | € 12,35 |
*prijsindicatie
- RS-stocknr.:
- 204-7198
- Fabrikantnummer:
- SQJQ144AE-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 575A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJQ144AE | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 600W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.7 mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 8.2mm | |
| Height | 8mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 575A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJQ144AE | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 600W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.7 mm | ||
Standards/Approvals AEC-Q101 | ||
Length 8.2mm | ||
Height 8mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has a thin 1.6 mm package.
Very low thermal resistance
TrenchFET Gen IV power MOSFET
Gerelateerde Links
- Vishay SQJQ144AE Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK (8x8L)
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ140E-T1_GE3
- Vishay SQJQ148E Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ148E-T1_GE3
- Vishay SQJQ142E Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ142E-T1_GE3
- Vishay Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJ184EP-T1_GE3
- Vishay SQJQ936E 4 Dual N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ936E-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L)
- Vishay SQJQ148E Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L)