Vishay N-Channel 100 V Type N-Channel MOSFET, 150 A, 100 V, 3-Pin TO-220 SUP70042E-GE3
- RS-stocknr.:
- 225-9972
- Fabrikantnummer:
- SUP70042E-GE3
- Fabrikant:
- Vishay
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€ 15,46
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€ 18,705
(incl. BTW)
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 3,092 | € 15,46 |
| 50 - 120 | € 2,782 | € 13,91 |
| 125 - 245 | € 2,628 | € 13,14 |
| 250 - 495 | € 2,474 | € 12,37 |
| 500 + | € 2,288 | € 11,44 |
*prijsindicatie
- RS-stocknr.:
- 225-9972
- Fabrikantnummer:
- SUP70042E-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | N-Channel 100 V | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 29.51mm | |
| Height | 4.65mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series N-Channel 100 V | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Operating Temperature 175°C | ||
Length 29.51mm | ||
Height 4.65mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET power MOSFET
Maximum 175 °C junction temperature
Very low Qgd reduces power loss from passing through V(plateau)
100 % Rg and UIS tested
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