Vishay SiHFPS37N50A Type N-Channel Power MOSFET, 36 A, 500 V Enhancement, 3-Pin Super-247 SiHFPS37N50A-GE3

This power MOSFET is a high-voltage, N-channel enhancement device designed for switching and power-management roles in industrial and electronic systems. It is a through-hole component in a Super-247 package intended for applications where robust thermal handling and high drain-source voltage capability are needed. The device operates across a wide temperature range and is specified for continuous drain current and substantial power dissipation, making it suitable for demanding power-switching tasks.

• 500V drain-source rating enabling high-voltage switching capability • 36 A continuous drain current supporting heavy load handling • 130 mΩ Rds(on) reducing conduction losses under load • 446W power dissipation improving thermal endurance in circuits • 180 nC typical gate charge facilitating predictable drive requirements • 30V maximum gate-source voltage providing common gate-drive margin

• Suitable for industrial inverter and motor-drive stages • Ideal for high-voltage power supplies and converters • Can be used for induction heating and welding power modules • Used with power rectification and switching arrays in automation • Suitable for gate-drive evaluation in power-electronics design

The device is rated to operate up to 150 °C maximum and down to -55 °C minimum, so thermal management should ensure junction temperature stays within that range under worst-case dissipation.

Expect a typical gate charge of 180 nC at the designated Vgs

It is supplied in a Super-247 through-hole package with three pins

The gate must not exceed a maximum gate-source voltage of 30V to prevent damage to the gate oxide.