Vishay TrenchFET Type N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8
- RS-stocknr.:
- 228-2900
- Fabrikantnummer:
- SiR500DP-T1-RE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 2.085,00
(excl. BTW)
€ 2.523,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 3.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,695 | € 2.085,00 |
*prijsindicatie
- RS-stocknr.:
- 228-2900
- Fabrikantnummer:
- SiR500DP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 350.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.47mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104.1W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 350.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.47mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104.1W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 30 V MOSFET.
100 % Rg and UIS tested
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