Vishay SiR N channel-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SiR500DP

Afbeelding representeert productcategorie

Bekijk alle MOSFETs

Subtotaal (1 eenheid)*

€ 1,76

(excl. BTW)

€ 2,13

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks
Per stuk
1 +€ 1,76

*prijsindicatie

RS-stocknr.:
735-151
Fabrikantnummer:
SiR500DP
Fabrikant:
Vishay
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

350.8A

Maximum Drain Source Voltage Vds

30V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00047Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

120nC

Maximum Gate Source Voltage Vgs

16V

Forward Voltage Vf

30V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104.1W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

7mm

Width

6mm

Height

2mm

Automotive Standard

No

Land van herkomst:
CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

Gerelateerde Links