Infineon IAUT N-Channel MOSFET, 300 A, 80 V Enhancement, 8-Pin HSOF IAUT300N08S5N012ATMA2

RS-stocknr.:: 229-1811
Fabrikantnummer:: IAUT300N08S5N012ATMA2
Fabrikant:: Infineon

Infineon IAUT N-Channel MOSFET, 300 A, 80 V Enhancement, 8-Pin HSOF IAUT300N08S5N012ATMA2

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20 - 48	€ 4,89	€ 9,78
50 - 98	€ 4,565	€ 9,13
100 - 198	€ 4,24	€ 8,48
200 +	€ 3,965	€ 7,93

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RS-stocknr.:: 229-1811
Fabrikantnummer:: IAUT300N08S5N012ATMA2
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	300A
	Maximum Drain Source Voltage Vds	80V
	Series	IAUT
	Package Type	HSOF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.2mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	375W
	Maximum Operating Temperature	+175°C
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 300A
	Maximum Drain Source Voltage Vds 80V
	Series IAUT
	Package Type HSOF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.2mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 375W
	Maximum Operating Temperature +175°C
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IAUT300N08S5N012ATMA2

Infineon IAUT Series MOSFET, 80V Maximum Drain Source Voltage, 300A Maximum Continuous Drain Current - IAUT300N08S5N012ATMA2

This MOSFET is a high-current N-channel enhancement device designed for demanding automotive and industrial power-switching roles. It operates across a wide ambient range and is supplied in a surface-mount HSOF package suited to heavy-current board layouts. The device is specified to withstand typical automotive gate excursions and delivers the voltage and current capacity needed for robust power conversion and motor-drive applications.

Features and Benefits:

• Low on-resistance of 1.2 mΩ reduces conduction losses and heat
• 80 V drain rating enables high-voltage switching applications
• 300 A continuous drain current supports high-current loads
• 375 W maximum dissipation allows sustained power handling
• ±20 V gate tolerance accommodates automotive gate-drive signals
• AEC-Q101 qualification meets automotive stress-screening requirements

Applications

• Suitable for traction inverter stages in electrified vehicles
• Ideal for high-current DC-DC converter outputs
• Used with motor-drive inverters and traction controllers
• Can be used for power distribution in automotive systems
• Suitable for industrial power modules requiring surface-mount assembly

What temperature extremes can this device tolerate?

It is rated to operate from -55 °C up to +175 °C.

What package type and mounting technology are used?

The device is supplied in an HSOF package and intended for surface-mounting.

How does the device handle gate stresses in automotive systems?

It accepts gate-source voltages up to ±20 V, allowing for typical automotive drive margins.

What channel conduction mode and type does it employ?

It is an enhancement-mode N-channel device designed for switching applications.