Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin SuperSO
- RS-stocknr.:
- 229-1840
- Fabrikantnummer:
- IPG20N04S409ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 2.520,00
(excl. BTW)
€ 3.050,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 15.000 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,504 | € 2.520,00 |
*prijsindicatie
- RS-stocknr.:
- 229-1840
- Fabrikantnummer:
- IPG20N04S409ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO | |
| Series | IPG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 54W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual N Channel Normal Level | |
| Height | 1mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 5.9 mm | |
| Length | 5.15mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO | ||
Series IPG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 54W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual N Channel Normal Level | ||
Height 1mm | ||
Standards/Approvals RoHS Compliant | ||
Width 5.9 mm | ||
Length 5.15mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon dual n channel normal level MOSFET has same thermal and electrical performance as a DPAK with the same die size. It's exposed pad provides excellent thermal transfer. It is two n channel in one package with 2 isolated lead frames.
It is RoHS compliant and AEC Q101 qualified
It has 175°C operating temperature
Gerelateerde Links
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S409ATMA1
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S412AATMA1
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S4L11AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S408AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S436AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S4L08AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG16N10S461AATMA1