onsemi NTMFS Type N-Channel MOSFET, 110 A, 100 V N, 8-Pin PQFN
- RS-stocknr.:
- 229-6472
- Fabrikantnummer:
- NTMFS7D8N10GTWG
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 229-6472
- Fabrikantnummer:
- NTMFS7D8N10GTWG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Maximum Power Dissipation Pd | 187W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.84V | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.1 mm | |
| Length | 5mm | |
| Height | 6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Maximum Power Dissipation Pd 187W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.84V | ||
Maximum Operating Temperature 175°C | ||
Width 1.1 mm | ||
Length 5mm | ||
Height 6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor N-channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Minimize conduction losses
High peak UIS current capability for ruggedness
Halogen-free
Pb-free
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