Infineon CoolMOS Type N-Channel MOSFET, 106 A, 650 V, 3-Pin TO-247 IPW65R018CFD7XKSA1
- RS-stocknr.:
- 232-3049
- Fabrikantnummer:
- IPW65R018CFD7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 19,59
(excl. BTW)
€ 23,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 240 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 19,59 |
| 2 - 4 | € 18,61 |
| 5 - 9 | € 17,83 |
| 10 - 24 | € 17,05 |
| 25 + | € 15,86 |
*prijsindicatie
- RS-stocknr.:
- 232-3049
- Fabrikantnummer:
- IPW65R018CFD7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 106A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 500W | |
| Typical Gate Charge Qg @ Vgs | 234nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 106A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 500W | ||
Typical Gate Charge Qg @ Vgs 234nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon CFD7 is super junction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and further more supports high power density solutions.
Ultrafast body diode and very low Qrr
650V breakdown voltage
Significantly reduced switching losses compared to competition
Gerelateerde Links
- Infineon CoolMOS™ N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R018CFD7XKSA1
- Infineon CoolMOS™ N-Channel MOSFET 700 V, 4-Pin TO-247-4 IPZA65R018CFD7XKSA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 650 V, 3-Pin TO-247 SPW20N60C3FKSA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R018CFD7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 650 V, 3-Pin TO-247 IPA60R360P7XKSA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R125C7XKSA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R041P6FKSA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 650 V, 3-Pin TO-247 SPW47N60C3FKSA1