onsemi NTH Type N-Channel MOSFET, 68 A, 1200 V N, 4-Pin TO-247 NTH4L022N120M3S
- RS-stocknr.:
- 233-6854
- Fabrikantnummer:
- NTH4L022N120M3S
- Fabrikant:
- onsemi
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€ 13,58
(excl. BTW)
€ 16,43
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|---|---|
| 1 - 9 | € 13,58 |
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*prijsindicatie
- RS-stocknr.:
- 233-6854
- Fabrikantnummer:
- NTH4L022N120M3S
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 325W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -0.45 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Length | 15.8mm | |
| Height | 41.36mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 325W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -0.45 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Length 15.8mm | ||
Height 41.36mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
The ON Semiconductor NTH4L022N120M3S is SiC power, single N-Channel MOSFET. It is available in a TO247-4L package. With Drain to Source voltage of 1200 V and continuous drain current of 68 A, the NTH4L022N120M3S is used in applications like Solar Inverters, Electric Vehicle Charging Stations, UPS (Uninterruptible Power Supplies), Energy Storage Systems, SMPS (Switch Mode Power Supplies).
The typical RDS(on) for this device is 22 mꭥ with VGS of 18 V
The device offers low switching losses
It is 100% avalanche tested
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