ROHM QH8MB5 Type P, Type N-Channel MOSFET, 5 A, 40 V Enhancement, 8-Pin TSMT-8 QH8MB5TCR
- RS-stocknr.:
- 235-2672
- Fabrikantnummer:
- QH8MB5TCR
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 4,47
(excl. BTW)
€ 5,41
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,447 | € 4,47 |
| 50 - 90 | € 0,439 | € 4,39 |
| 100 - 240 | € 0,348 | € 3,48 |
| 250 - 990 | € 0,338 | € 3,38 |
| 1000 + | € 0,263 | € 2,63 |
*prijsindicatie
- RS-stocknr.:
- 235-2672
- Fabrikantnummer:
- QH8MB5TCR
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSMT-8 | |
| Series | QH8MB5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 0.85 mm | |
| Height | 2.9mm | |
| Length | 3.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSMT-8 | ||
Series QH8MB5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.5W | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 0.85 mm | ||
Height 2.9mm | ||
Length 3.1mm | ||
Automotive Standard No | ||
The ROHM dual N channel and P channel MOSFET which supports 40V withstand voltage. This is designed for 24V input equipment's such as factory automation equipment's, and motors mounted on base stations. By combining the optimum N channel + P channel, reduces the design efforts. It also contributes to lower power consumption of equipment.
Low on-resistance
Small surface mount package
Pb-free lead plating
RoHS compliant
Halogen Free
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