ROHM SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247N SCT2280KEGC11

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RS-stocknr.:
235-2798
Fabrikantnummer:
SCT2280KEGC11
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247N

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.28 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

SiC

Number of Elements per Chip

1

The ROHM SCT series N-channel SiC power MOSFET suitable for solar inverters, DC/DC converters, induction heating and motor drives. It has low on state resistance and fast switching speed.

Fast reverse recovery

Easy to parallel

Simple to drive

Pb-free lead plating

RoHS compliant

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