ROHM Type N-Channel MOSFET, 8.5 A, 40 V Enhancement, 8-Pin SOP SH8KB6TB1
- RS-stocknr.:
- 235-2807
- Fabrikantnummer:
- SH8KB6TB1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 17,65
(excl. BTW)
€ 21,35
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,706 | € 17,65 |
| 50 - 75 | € 0,691 | € 17,28 |
| 100 - 225 | € 0,685 | € 17,13 |
| 250 - 975 | € 0,665 | € 16,63 |
| 1000 + | € 0,547 | € 13,68 |
*prijsindicatie
- RS-stocknr.:
- 235-2807
- Fabrikantnummer:
- SH8KB6TB1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 19.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.75 mm | |
| Length | 4.05mm | |
| Standards/Approvals | No | |
| Height | 5.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 19.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Width 1.75 mm | ||
Length 4.05mm | ||
Standards/Approvals No | ||
Height 5.2mm | ||
Automotive Standard No | ||
The ROHM low on-resistance MOSFET Ideal for switching applications. This product includes two 40V MOSFETs in a small surface mount package.
Pb-free plating
Halogen Free
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