Infineon ISP Type P-Channel MOSFET, 1.29 A, 150 V Enhancement, 3-Pin SOT-223 ISP14EP15LMXTSA1

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€ 148,00

(excl. BTW)

€ 179,00

(incl. BTW)

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  • Verzending vanaf 25 mei 2026
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RS-stocknr.:
235-4874
Fabrikantnummer:
ISP14EP15LMXTSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.29A

Maximum Drain Source Voltage Vds

150V

Series

ISP

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.38Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

11.6nC

Maximum Power Dissipation Pd

5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

5.35mm

Standards/Approvals

No

Length

6.1mm

Width

1.2 mm

Automotive Standard

No

The Infineon OptiMOS™ P-Channel MOSFETs 150V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-Channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Ideal for high and low switching frequency

Avalanche ruggedness

Industry standard footprint surface mount package

Robust, reliable performance

Increased security of supply

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