STMicroelectronics Type N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP150N10F7AG
- RS-stocknr.:
- 235-5448
- Fabrikantnummer:
- STP150N10F7AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,25
(excl. BTW)
€ 8,772
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 808 stuk(s) vanaf 05 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 3,625 | € 7,25 |
| 10 - 18 | € 3,445 | € 6,89 |
| 20 - 48 | € 3,09 | € 6,18 |
| 50 - 98 | € 2,785 | € 5,57 |
| 100 + | € 2,65 | € 5,30 |
*prijsindicatie
- RS-stocknr.:
- 235-5448
- Fabrikantnummer:
- STP150N10F7AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 250W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 127nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 250W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 127nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
175°C junction temperature
Standard level VGS(TH)
Designed for automotive application
100% avalanche rated
Applications
Switching applications
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