Infineon CoolMOS Type N-Channel MOSFET, 12 A, 700 V, 3-Pin TO-220 IPP65R190CFD7XKSA1
- RS-stocknr.:
- 236-3667
- Fabrikantnummer:
- IPP65R190CFD7XKSA1
- Fabrikant:
- Infineon
Subtotaal (1 tube van 500 eenheden)*
€ 458,50
(excl. BTW)
€ 555,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 500 + | € 0,917 | € 458,50 |
*prijsindicatie
- RS-stocknr.:
- 236-3667
- Fabrikantnummer:
- IPP65R190CFD7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 63W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Height | 9.45mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 63W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Height 9.45mm | ||
Automotive Standard No | ||
The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 12 A.
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Outstanding light-load efficiency in industrial SMPS applications
Improved full-load efficiency in industrial SMPS applications
Price competitiveness compared to alternative offerings in the market
Gerelateerde Links
- Infineon CoolMOS Type N-Channel MOSFET 700 V, 3-Pin TO-220 IPP65R190CFD7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V N, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 700 V N, 3-Pin TO-220 IPAN70R600P7SXKSA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V, 3-Pin TO-220 IPP65R110CFD7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V, 3-Pin TO-220 IPP65R090CFD7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V, 3-Pin TO-220 IPP65R155CFD7XKSA1
- Infineon CoolMOS E6 N-Channel MOSFET 700 V, 3-Pin TO-220 IPP65R190E6XKSA1
- Infineon 700V CoolMOS CE Type N-Channel MOSFET 700 V N, 3-Pin TO-220