Infineon CoolMOS Type N-Channel MOSFET, 12 A, 700 V, 3-Pin TO-220 IPP65R190CFD7XKSA1

Subtotaal (1 tube van 500 eenheden)*

€ 458,50

(excl. BTW)

€ 555,00

(incl. BTW)

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Aantal stuks
Per stuk
Per tube*
500 +€ 0,917€ 458,50

*prijsindicatie

RS-stocknr.:
236-3667
Fabrikantnummer:
IPP65R190CFD7XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-220

Series

CoolMOS

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

63W

Typical Gate Charge Qg @ Vgs

23nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

4.57 mm

Length

10.36mm

Height

9.45mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 12 A.

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

Outstanding light-load efficiency in industrial SMPS applications

Improved full-load efficiency in industrial SMPS applications

Price competitiveness compared to alternative offerings in the market

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