Infineon CoolMOS N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPAN70R600P7SXKSA1
- RS-stocknr.:
- 217-2500
- Fabrikantnummer:
- IPAN70R600P7SXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 35,45
(excl. BTW)
€ 42,90
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 350 stuk(s) vanaf 02 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 0,709 | € 35,45 |
| 100 - 200 | € 0,69 | € 34,50 |
| 250 - 450 | € 0,672 | € 33,60 |
| 500 - 1200 | € 0,654 | € 32,70 |
| 1250 + | € 0,638 | € 31,90 |
*prijsindicatie
- RS-stocknr.:
- 217-2500
- Fabrikantnummer:
- IPAN70R600P7SXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 82W | |
| Forward Voltage Vf | 900mV | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.8mm | |
| Standards/Approvals | No | |
| Height | 29.87mm | |
| Length | 16.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 82W | ||
Forward Voltage Vf 900mV | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.8mm | ||
Standards/Approvals No | ||
Height 29.87mm | ||
Length 16.1mm | ||
Automotive Standard No | ||
The Infineon 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behaviour.
Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behaviour
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
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