Vishay SiA4263DJ Type P-Channel MOSFET, 12 A, 30 V PowerPAK SC-70 SIA4263DJ-T1-GE3
- RS-stocknr.:
- 239-5364
- Fabrikantnummer:
- SIA4263DJ-T1-GE3
- Fabrikant:
- Vishay
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- RS-stocknr.:
- 239-5364
- Fabrikantnummer:
- SIA4263DJ-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SC-70 | |
| Series | SiA4263DJ | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 199mΩ | |
| Typical Gate Charge Qg @ Vgs | 19.8nC | |
| Maximum Power Dissipation Pd | 15.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SC-70 | ||
Series SiA4263DJ | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 199mΩ | ||
Typical Gate Charge Qg @ Vgs 19.8nC | ||
Maximum Power Dissipation Pd 15.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay P channel MOSFET has drain current of -12 A. It is used for battery management in mobile devices, battery switch, load switch, PA switch
RDS(on) rating at VGS = -1.8 V
100 % Rg and UIS tested
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