Vishay N-Channel MOSFET, 218 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR626LEP-T1-RE3
- RS-stocknr.:
- 239-8616
- Fabrikantnummer:
- SiDR626LEP-T1-RE3
- Fabrikant:
- Vishay
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- RS-stocknr.:
- 239-8616
- Fabrikantnummer:
- SiDR626LEP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 218A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0021Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 120W | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 6.15mm | |
| Width | 5.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 218A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0021Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 120W | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 125°C | ||
Length 6.15mm | ||
Width 5.15mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V and 175 °C temperature. This MOSFET used for solar micro inverter, motor drive switch and synchronous rectification.
Top side cooling feature provides additional venue for thermal transfer
Very low resistance
UIS tested
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