Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E
- RS-stocknr.:
- 240-1974
- Fabrikantnummer:
- PSMN2R0-55YLHX
- Fabrikant:
- Nexperia
Subtotaal (1 rol van 1500 eenheden)*
€ 2.494,50
(excl. BTW)
€ 3.018,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 1.500 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1500 + | € 1,663 | € 2.494,50 |
*prijsindicatie
- RS-stocknr.:
- 240-1974
- Fabrikantnummer:
- PSMN2R0-55YLHX
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK56E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 12.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK56E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 12.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia N-channel enhancement mode MOSFET is in LFPAK56E package. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe a
Qualified to 175 °C
Avalanche rated, 100% tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
Gerelateerde Links
- Nexperia Type N-Channel MOSFET 30 V, 4-Pin LFPAK56E PSMN2R0-55YLHX
- Nexperia Type N-Channel MOSFET 30 V, 4-Pin LFPAK56E
- Nexperia Type N-Channel MOSFET 30 V, 4-Pin LFPAK56E PSMN4R8-100YSEX
- Nexperia Type N-Channel MOSFET 30 V, 4-Pin LFPAK56E PSMN1R5-50YLHX
- Nexperia Type N-Channel MOSFET 30 V, 4-Pin LFPAK56E PSMN3R5-80YSFX
- Nexperia Type N-Channel MOSFET 30 V, 4-Pin LFPAK88
- Nexperia Type N-Channel MOSFET 30 V, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33