Infineon IPL Type N-Channel MOSFET, 9.4 A, 700 V, 5-Pin ThinPAK 5x6 IPLK70R1K2P7ATMA1
- RS-stocknr.:
- 240-8536
- Fabrikantnummer:
- IPLK70R1K2P7ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 4,03
(excl. BTW)
€ 4,875
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 4.970 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 0,806 | € 4,03 |
| 50 - 120 | € 0,716 | € 3,58 |
| 125 - 245 | € 0,668 | € 3,34 |
| 250 - 495 | € 0,63 | € 3,15 |
| 500 + | € 0,578 | € 2,89 |
*prijsindicatie
- RS-stocknr.:
- 240-8536
- Fabrikantnummer:
- IPLK70R1K2P7ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | ThinPAK 5x6 | |
| Series | IPL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 3 V | |
| Maximum Power Dissipation Pd | 25.5W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.35mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type ThinPAK 5x6 | ||
Series IPL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 3 V | ||
Maximum Power Dissipation Pd 25.5W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 6.35mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolMOS™ P7 super junction (SJ) MOSFET family is designed to address typical challenges in the low-power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The ThinPAK 5x6 package is characterized by a very small footprint of 5x6 mm² and a very low profile with a height of 1 mm. Together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. This combination makes CoolMOS™ P7 in ThinPAK a perfect fit for its target applications. The 700V CoolMOS™ P7 family is optimized for flyback topologies.
Extremely low losses
Excellent thermal behaviour
Integrated ESD protection diode
Low switching glosses(Eoss)
Fully qualified acc. JEDEC for Industrial Applications
Best-in-class quality and reliability
Low EMI
Wide range of RDS(on) values
Fully optimized portfolio
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