onsemi NTHL N-Channel MOSFET, 58 A, 1.2 kV, 5-Pin TO-247 NTHL045N065SC1
- RS-stocknr.:
- 241-0744
- Fabrikantnummer:
- NTHL045N065SC1
- Fabrikant:
- onsemi
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€ 13,04
(excl. BTW)
€ 15,78
(incl. BTW)
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- Plus verzending 305 stuk(s) vanaf 02 november 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 13,04 |
| 10 - 99 | € 11,23 |
| 100 + | € 9,74 |
*prijsindicatie
- RS-stocknr.:
- 241-0744
- Fabrikantnummer:
- NTHL045N065SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | NTHL | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series NTHL | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L
The ON Semiconductor 650 V, 42 mΩ N-Channel silicon carbide MOSFET. Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Junction Temperature
High Speed Switching and Low Capacitance
Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A
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