onsemi NTHL Type N-Channel MOSFET, 58 A, 1200 V, 5-Pin TO-247 NTHL045N065SC1
- RS-stocknr.:
- 241-0744
- Fabrikantnummer:
- NTHL045N065SC1
- Fabrikant:
- onsemi
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Subtotaal (1 eenheid)*
€ 12,48
(excl. BTW)
€ 15,10
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 12,48 |
| 10 - 99 | € 10,75 |
| 100 + | € 9,32 |
*prijsindicatie
- RS-stocknr.:
- 241-0744
- Fabrikantnummer:
- NTHL045N065SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTHL | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Power Dissipation Pd | 117W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTHL | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Power Dissipation Pd 117W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L
The ON Semiconductor 650 V, 42 mΩ N-Channel silicon carbide MOSFET. Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Junction Temperature
High Speed Switching and Low Capacitance
Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A
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