Microchip MSC080SMA120B4 Type N-Channel MOSFET, 140 A, 12 V, 4-Pin TO-247 MSC080SMA120B4
- RS-stocknr.:
- 241-9269P
- Fabrikantnummer:
- MSC080SMA120B4
- Fabrikant:
- Microchip
Bulkkorting beschikbaar
Subtotaal 5 eenheden (geleverd in een buis)*
€ 39,70
(excl. BTW)
€ 48,05
(incl. BTW)
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- Verzending vanaf 24 april 2026
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Aantal stuks | Per stuk |
|---|---|
| 5 - 9 | € 7,94 |
| 10 - 99 | € 7,78 |
| 100 + | € 7,45 |
*prijsindicatie
- RS-stocknr.:
- 241-9269P
- Fabrikantnummer:
- MSC080SMA120B4
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | MSC080SMA120B4 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Maximum Gate Source Voltage Vgs | 2 V | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series MSC080SMA120B4 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Maximum Gate Source Voltage Vgs 2 V | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max) equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant