Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ075N08NS5ATMA1
- RS-stocknr.:
- 241-9683
- Fabrikantnummer:
- BSZ075N08NS5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,37
(excl. BTW)
€ 7,71
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 14.955 stuk(s) vanaf 30 december 2025
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,274 | € 6,37 |
| 50 - 120 | € 1,148 | € 5,74 |
| 125 - 245 | € 1,07 | € 5,35 |
| 250 - 495 | € 0,994 | € 4,97 |
| 500 + | € 0,93 | € 4,65 |
*prijsindicatie
- RS-stocknr.:
- 241-9683
- Fabrikantnummer:
- BSZ075N08NS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 5 N-channel MOSFET has 80 V drain source voltage (VDS) & 73 A drain current (ID). It offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. regulator, etc. It is especially designed for synchronous rectification in telecom and server power supplies. In addition, it can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DCconverters
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
100% avalanche tested
N-channel, normal level
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
Higher solder joint reliability with enlarged source interconnection
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