Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ065N06LS5ATMA1

Bulkkorting beschikbaar
Bekijk bulkkorting

Subtotaal (5 eenheden, in een pakket van 5)*

€ 8,66

(excl. BTW)

€ 10,48

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 970 stuk(s) vanaf 07 oktober 2026
  • Plus verzending 5.000 stuk(s) vanaf 17 juni 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks
Per stuk
Per verpakking*
5 - 45€ 1,732€ 8,66
50 - 120€ 1,51€ 7,55
125 - 245€ 1,406€ 7,03
250 - 495€ 1,32€ 6,60
500 +€ 1,212€ 6,06

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
244-1568
Fabrikantnummer:
BSZ065N06LS5ATMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Package Type

SuperSO8 5 x 6

Series

BSZ

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon BSZ Series MOSFET, 40V Maximum Drain Source Voltage, 212A Maximum Continuous Drain Current - BSZ065N06LS5ATMA1


This MOSFET is a high-current N-channel switching device designed for surface-mount power management in demanding electronic systems. It operates across a wide temperature range and is intended for applications requiring substantial continuous drain current and efficient conduction with low forward voltage.

Features and Benefits:


• 212A continuous drain current delivers sustained high-current capability
• 0.7mΩ Rds(on) minimises conduction losses for improved efficiency
• 81W maximum power dissipation supports elevated thermal loads
• 1.2V forward voltage reduces voltage drop under load
• 80nC typical gate charge enables fast switching performance
• 20V maximum gate-source rating protects gate from overvoltage

Applications


• Suitable for high-current DC-DC converters in power stages
• Ideal for motor drive half-bridge and H-bridge designs
• Used for battery protection and power distribution modules
• Can be used for synchronous rectification in power supplies
• Applicable to high-power switching in industrial control units

What thermal range can this device tolerate in operation?


It functions from −55°C up to +150°C enabling use in harsh temperature environments.

How is the component packaged for PCB assembly?


It comes in an 8-pin SuperSO8 5x6 surface-mount package for Compact board mounting.

What gate-drive considerations are needed for switching?


Drive circuitry must provide adequate charge for the typical 80nC gate charge to achieve the intended switching speed and respect the 20V maximum Vgs limit.

What type of channel conduction does it provide?


It is an N-channel device designed for enhanced current flow in low-side or high-side switching topologies.

Gerelateerde Links

Wees als eerste op de hoogte van onze nieuwste producten en aanbiedingen

E-mailadres

De persoonlijke gegevens die u aan ons verstrekt bij het aanmelden voor deze mailinglijst worden verwerkt in overeenstemming met ons privacybeleid.