Infineon BSC0 N-Channel MOSFET, 381 A, 60 V N, 8-Pin TDSON BSC027N06LS5ATMA1

Subtotaal (1 rol van 5000 eenheden)*

€ 3.705,00

(excl. BTW)

€ 4.485,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 07 oktober 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
5000 +€ 0,741€ 3.705,00

*prijsindicatie

RS-stocknr.:
241-9874
Fabrikantnummer:
BSC027N06LS5ATMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

381A

Maximum Drain Source Voltage Vds

60V

Package Type

TDSON

Series

BSC0

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon BSC0 Series MOSFET, 60V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC027N06LS5ATMA1


This MOSFET is a high-current N-channel power transistor designed for surface-mount applications where efficient switching and thermal endurance are required in demanding temperature ranges. It operates as a logic-compatible switch for power stages, delivering substantial continuous current capability while remaining suitable for Compact board layouts and assemblies that require low on-resistance and controlled gate drive characteristics.

Features and Benefits:


• 60V drain voltage limits enable robust medium-voltage switching
• 381A continuous current delivers high sustained load capacity
• 0.7mΩ Rds(on) reduces conduction losses under heavy loads
• 81W power dissipation allows significant thermal headroom
• 80nC typical gate charge supports Faster switching with moderate drive
• 1.2V forward diode voltage minimises recovery stress during commutation

Applications


• Suitable for high-current motor driver stages on Compact boards
• Ideal for synchronous rectification in power converters
• Used with battery management systems requiring low conduction loss
• Can be used for switch stages in DC-DC power modules
• Appropriate for industrial drives operating across wide temperatures

What gate drive margin is recommended for reliable switching?


A gate drive up to the maximum 20V Vgs is permissible but typical logic-level drive should consider the 80nC gate charge when sizing the driver to achieve desired transition speeds.

How does thermal performance affect layout and cooling?


With an 81W maximum dissipation rating, board design should provide adequate copper area and thermal vias to conduct heat away from the TDSON package for sustained high-current operation.

What environmental range can it tolerate during operation?


It functions across a wide ambient span from -55°C up to +150°C, supporting designs exposed to extreme temperatures.

How does the intrinsic diode behaviour influence switching events?


The 1.2V forward diode characteristic reduces Peak reverse recovery stress during mode changes, impacting snubber and clamp requirements.

Gerelateerde Links

Wees als eerste op de hoogte van onze nieuwste producten en aanbiedingen

E-mailadres

De persoonlijke gegevens die u aan ons verstrekt bij het aanmelden voor deze mailinglijst worden verwerkt in overeenstemming met ons privacybeleid.