Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin TSDSON-8 FL BSZ0500NSIATMA1
- RS-stocknr.:
- 241-9887
- Fabrikantnummer:
- BSZ0500NSIATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 4,13
(excl. BTW)
€ 4,998
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 5.000 stuk(s) vanaf 08 april 2027
- Plus verzending 5.000 stuk(s) vanaf 22 april 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,065 | € 4,13 |
| 20 - 48 | € 1,86 | € 3,72 |
| 50 - 98 | € 1,73 | € 3,46 |
| 100 - 198 | € 1,615 | € 3,23 |
| 200 + | € 1,505 | € 3,01 |
*prijsindicatie
- RS-stocknr.:
- 241-9887
- Fabrikantnummer:
- BSZ0500NSIATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSDSON-8 FL | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSDSON-8 FL | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 Power-Transistor is a N channel power MOSFET which is optimized for high performance buck converters. It has Pb-free lead plating.
Monolithically integrated Schottky-like diode
Very low on-resistance
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