Infineon IAUC N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TDSON IAUC90N10S5N062ATMA1

RS-stocknr.:: 241-9891
Fabrikantnummer:: IAUC90N10S5N062ATMA1
Fabrikant:: Infineon

Infineon IAUC N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TDSON IAUC90N10S5N062ATMA1

Subtotaal (5000 eenheden, op een rol van 5000)*

€ 2.845,00

(excl. BTW)

€ 3.440,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 08 april 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
5000 +	€ 0,569	€ 2.845,00

*prijsindicatie

RS-stocknr.:: 241-9891
Fabrikantnummer:: IAUC90N10S5N062ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TDSON
	Series	IAUC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 40V
	Package Type TDSON
	Series IAUC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IAUC90N10S5N062ATMA1

Infineon IAUC Series MOSFET, 81W Maximum Power Dissipation, 120A Maximum Continuous Drain Current - IAUC90N10S5N062ATMA1

This MOSFET is a power switching transistor designed for high-current, high-temperature environments, providing controlled conduction in enhancement-mode N-channel configurations. It is intended for surface-mount applications where robust thermal and electrical performance are required, and it complies with environmental restriction standards.

Features and Benefits:

• 40V drain rating enabling mid-voltage power switching
• 120A continuous drain current for high-current loads
• 0.7mΩ low on-resistance reducing conduction losses
• 81W power dissipation supporting elevated power handling
• 80nC typical gate charge allowing predictable switching energy
• 20V gate tolerance offering wide gate-drive flexibility

Applications

• Suitable for automotive power management modules
• Ideal for high-current motor drive stages
• Used for DC-DC conversion in industrial systems
• Can be used for battery protection and distribution
• Suitable for Compact surface-mount power assemblies

What thermal range can it operate over?

It is specified to operate from -55°C up to 175°C to accommodate wide thermal envelopes.

What package and mounting style does it use?

It is supplied in a TDSON package designed for surface mounting to control board real estate and thermal paths.

Is it suitable for automotive design requirements?

It meets AEC‑Q101 qualification and is RoHS-compliant for automotive-grade applications.

What channel and conduction mode does it employ?

It is an N-channel device operating in enhancement mode for controlled switching behaviour.