Infineon BSC0 N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC026N08NS5ATMA1
- RS-stocknr.:
- 242-0294
- Fabrikantnummer:
- BSC026N08NS5ATMA1
- Fabrikant:
- Infineon
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*prijsindicatie
- RS-stocknr.:
- 242-0294
- Fabrikantnummer:
- BSC026N08NS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | BSC0 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series BSC0 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSC0 Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC026N08NS5ATMA1
This MOSFET is a power switching device designed for high-current, low-loss applications in surface-mount assemblies. It operates across a wide ambient range and is suited to circuits requiring Rapid switching and substantial continuous drain capability while remaining compliant with environmental restriction directives.
Features and Benefits:
• 40V drain capability enables low-voltage power-stage operation
• 381A continuous drain current supports heavy current flows
• 0.7mΩ Rds(on) minimises conduction losses under load
• 81W power dissipation allows sustained thermal loading
• 80nC typical gate charge supports efficient switching control
• 20V maximum gate voltage permits standard drive-level compatibility
• 381A continuous drain current supports heavy current flows
• 0.7mΩ Rds(on) minimises conduction losses under load
• 81W power dissipation allows sustained thermal loading
• 80nC typical gate charge supports efficient switching control
• 20V maximum gate voltage permits standard drive-level compatibility
Applications
• Suitable for high-current DC-DC converters in power racks
• Ideal for server and telecoms power distribution modules
• Used with motor drivers requiring fast switching and high current
• Can be used for battery management systems in high-power packs
• Suitable for synchronous rectification in high-efficiency supplies
• Ideal for server and telecoms power distribution modules
• Used with motor drivers requiring fast switching and high current
• Can be used for battery management systems in high-power packs
• Suitable for synchronous rectification in high-efficiency supplies
What temperature range can it reliably operate within?
It is specified to function from -55°C up to +150°C.
What package and mounting style does it use?
It is provided in a SuperSO8 5x6mm package for surface mounting.
How does its gate charge affect switching losses?
The 80nC gate charge represents the input energy required per switching event and influences gate-drive energy and transition speed.
Is it suitable for automotive qualification programmes?
It is not classified as an automotive-standard device.
What environmental compliance does it meet?
It is produced to meet RoHS environmental restrictions.
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