Infineon BSC Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC037N08NS5TATMA1
- RS-stocknr.:
- 242-0296
- Fabrikantnummer:
- BSC037N08NS5TATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 5,02
(excl. BTW)
€ 6,08
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 4.920 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,51 | € 5,02 |
| 20 - 48 | € 2,255 | € 4,51 |
| 50 - 98 | € 2,105 | € 4,21 |
| 100 - 198 | € 1,955 | € 3,91 |
| 200 + | € 1,835 | € 3,67 |
*prijsindicatie
- RS-stocknr.:
- 242-0296
- Fabrikantnummer:
- BSC037N08NS5TATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 power transistor is a N channel MOSFET which is fully qualified according to JEDEC for Industrial Applications. It has Superior thermal resistance.
Optimized for high performance SMPS
Halogen-free according to IEC61249-2-21
Gerelateerde Links
- Infineon N-Channel MOSFET 80 V, 8-Pin SuperSO8 5 x 6 BSC037N08NS5TATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IAUC80N04S6L032ATMA1
- Infineon N-Channel MOSFET Transistor 80 V, 8-Pin SuperSO8 5 x 6 IAUZ20N08S5L300ATMA1
- Infineon N-Channel MOSFET Transistor 20 V, 8-Pin SuperSO8 5 x 6 IAUC80N04S6N036ATMA1
- Infineon N-Channel MOSFET Transistor 25 V, 8-Pin SuperSO8 5 x 6 BSZ031NE2LS5ATMA1
- Infineon N-Channel MOSFET Transistor 30 V, 8-Pin SuperSO8 5 x 6 BSC0901NSIATMA1
- Infineon N-Channel MOSFET Transistor 80 V, 8-Pin SuperSO8 5 x 6 BSZ075N08NS5ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 80 V, 8-Pin SuperSO8 5 x 6 BSC052N08NS5ATMA1
