Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263 IPB017N10N5ATMA1

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RS-stocknr.:
242-5817
Fabrikantnummer:
IPB017N10N5ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

273A

Maximum Drain Source Voltage Vds

100V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

Optimized for synchronous rectification

Ideal for high switching frequency

Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation

Highest system efficiency

Reduced switching and conduction losses

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