Infineon IAUC Type N-Channel MOSFET, 80 A, 20 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC80N04S6N036ATMA1
- RS-stocknr.:
- 243-9317
- Fabrikantnummer:
- IAUC80N04S6N036ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 5,45
(excl. BTW)
€ 6,60
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 5.000 stuk(s) vanaf 31 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,09 | € 5,45 |
| 50 - 120 | € 0,978 | € 4,89 |
| 125 - 245 | € 0,914 | € 4,57 |
| 250 - 495 | € 0,852 | € 4,26 |
| 500 + | € 0,794 | € 3,97 |
*prijsindicatie
- RS-stocknr.:
- 243-9317
- Fabrikantnummer:
- IAUC80N04S6N036ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | IAUC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series IAUC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon has MOSFET which is OptiMOS power MOSFET for automotive applications, N-channel-Enhancement mode-Logic Level and AEC Q101 qualified.
N Channel
100% Avalanche tested
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
Gerelateerde Links
- Infineon N-Channel MOSFET Transistor 20 V, 8-Pin SuperSO8 5 x 6 IAUC80N04S6N036ATMA1
- Infineon N-Channel MOSFET Transistor 80 V, 8-Pin SuperSO8 5 x 6 IAUZ20N08S5L300ATMA1
- Infineon N-Channel MOSFET Transistor 25 V, 8-Pin SuperSO8 5 x 6 BSZ031NE2LS5ATMA1
- Infineon N-Channel MOSFET Transistor 30 V, 8-Pin SuperSO8 5 x 6 BSC0901NSIATMA1
- Infineon N-Channel MOSFET Transistor 80 V, 8-Pin SuperSO8 5 x 6 BSZ075N08NS5ATMA1
- Infineon OptiMOS™ 3 Dual N-Channel MOSFET Transistor & Diode 80 V, 8-Pin SuperSO8 5 x 6 BSC061N08NS5ATMA1
- Infineon N-Channel MOSFET Transistor 20 V, 8-Pin SuperSO8 5 x 6 IAUC60N04S6N044ATMA1
- Infineon Dual N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 IPG20N06S4L14AATMA1