Infineon IPT N-Channel MOSFET, 400 A, 800 V, 8-Pin TO-263 IPT012N08N5ATMA1

RS-stocknr.:: 244-0902
Fabrikantnummer:: IPT012N08N5ATMA1
Fabrikant:: Infineon

Infineon IPT N-Channel MOSFET, 400 A, 800 V, 8-Pin TO-263 IPT012N08N5ATMA1

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 eenheid)*

€ 6,49

(excl. BTW)

€ 7,85

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

974 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk
1 - 9	€ 6,49
10 - 24	€ 6,17
25 +	€ 5,92

*prijsindicatie

RS-stocknr.:: 244-0902
Fabrikantnummer:: IPT012N08N5ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	400A
	Maximum Drain Source Voltage Vds	800V
	Series	IPT
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.2mΩ
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 400A
	Maximum Drain Source Voltage Vds 800V
	Series IPT
	Package Type TO-263
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.2mΩ
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPT012N08N5ATMA1

Infineon IPT Series MOSFET, 800V Maximum Drain Source Voltage, 400A Maximum Continuous Drain Current - IPT012N08N5ATMA1

This MOSFET is a high-voltage, high-current switching device designed for demanding power conversion and automotive environments. It functions as an N-channel transistor for controlling large DC loads and is intended for surface-mounted applications where thermal endurance and robust electrical performance are required.

Features and Benefits:

• 800V rating enables high-voltage switch operation
• 400A continuous current supports heavy-load applications
• 1.2mΩ low Rds(on) minimises conduction losses
• 81W power dissipation allows sustained power handling
• 80nC gate charge permits predictable switching control
• -55°C to 175°C temperature range ensures wide thermal tolerance

Applications

• Suitable for high-voltage traction inverter stages
• Ideal for battery management and power distribution
• Used with automotive power converters meeting AEC‑Q101 requirements
• Can be used for industrial motor drive switching
• Used for high-current DC-DC converter topologies

What gate voltage limits must be observed?

The device accepts up to 20V between gate and source and requires appropriate gate drive levels within that limit.

What package should be considered for thermal management?

The TO‑263 surface-mount package offers a large thermal pad area for heatsinking and PCB thermal dissipation.

How does the component handle automotive qualification?

It conforms to the AEC‑Q101 automotive test standard for semiconductor devices used in vehicles.

What environmental regulation compliance is present?

The component meets RoHS requirements for restricted hazardous substances.

What is the channel conduction type and switching orientation?

It is an N-channel device configured for drain-to-source conduction in conventional high-side or low-side switch arrangements.