DiodesZetex DMN2991UFO Type N-Channel MOSFET, 540 mA, 20 V Enhancement, 3-Pin X2-DFN
- RS-stocknr.:
- 244-1921
- Fabrikantnummer:
- DMN2991UFB4-7B
- Fabrikant:
- DiodesZetex
Subtotaal (1 rol van 10000 eenheden)*
€ 310,00
(excl. BTW)
€ 380,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10000 + | € 0,031 | € 310,00 |
*prijsindicatie
- RS-stocknr.:
- 244-1921
- Fabrikantnummer:
- DMN2991UFB4-7B
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN2991UFO | |
| Package Type | X2-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 990mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 0.44W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 0.35nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.05mm | |
| Standards/Approvals | No | |
| Width | 0.65 mm | |
| Height | 0.4mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN2991UFO | ||
Package Type X2-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 990mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 0.44W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 0.35nC | ||
Maximum Operating Temperature 150°C | ||
Length 1.05mm | ||
Standards/Approvals No | ||
Width 0.65 mm | ||
Height 0.4mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET is designed to minimize the on state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications.
0.4mm Profile ideal for low profile applications
Low gate threshold voltage
Totally lead free and fully RoHS compliant
Halogen and antimony free green device
Gerelateerde Links
- Diodes Inc N-Channel MOSFET 20 V, 3-Pin X2-DFN1006 DMN2991UFB4-7B
- Diodes Inc BC846BLP4-7B NPN Transistor 65 V, 3-Pin X2-DFN1006
- Diodes Inc N-Channel MOSFET 12 V, 3-Pin X2-DFN0806 DMN1260UFA-7B
- Diodes Inc D2V5L1BS2LP4-7B, Bi-Directional TVS Diode X2-DFN1006-2
- Diodes Inc D2V5H1BS2LP4-7B, Bi-Directional TVS Diode X2-DFN1006-2
- Diodes Inc N-Channel MOSFET 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B
- Diodes Inc DSS3540MQ-7B PNP Transistor -40 V X1-DFN1006-3
- Diodes Inc P-Channel MOSFET 20 V X1-DFN1006-3 DMP2900UFB-7B
