DiodesZetex DMN2991UFO Type N-Channel MOSFET, 540 mA, 20 V Enhancement, 3-Pin X2-DFN DMN2991UFB4-7B
- RS-stocknr.:
- 244-1922
- Fabrikantnummer:
- DMN2991UFB4-7B
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 0,825
(excl. BTW)
€ 1,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 7.850 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 475 | € 0,033 | € 0,83 |
| 500 - 975 | € 0,032 | € 0,80 |
| 1000 - 2475 | € 0,031 | € 0,78 |
| 2500 - 4975 | € 0,03 | € 0,75 |
| 5000 + | € 0,03 | € 0,75 |
*prijsindicatie
- RS-stocknr.:
- 244-1922
- Fabrikantnummer:
- DMN2991UFB4-7B
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN2991UFO | |
| Package Type | X2-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 990mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.44W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 0.35nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 1.05mm | |
| Height | 0.4mm | |
| Width | 0.65 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN2991UFO | ||
Package Type X2-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 990mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.44W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 0.35nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 1.05mm | ||
Height 0.4mm | ||
Width 0.65 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET is designed to minimize the on state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications.
0.4mm Profile ideal for low profile applications
Low gate threshold voltage
Totally lead free and fully RoHS compliant
Halogen and antimony free green device
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